IPP139N08N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

45A

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

80V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

80V

Published :

2011

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

13.9m Ω @ 45A, 10V

Surface Mount :

No

Vgs(th) (Max) @ Id :

3.5V @ 33μA

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

79W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1730pF @ 40V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

180A

Drain-source On Resistance-Max :

0.0139Ohm

JESD-609 Code :

e3

Packaging :

Tube

Avalanche Energy Rating (Eas) :

50 mJ