IPP129N10NF2SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

3.8W (Ta), 71W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 50 V

Mounting Style :

Through Hole

Product Type :

MOSFET

Operating Temperature :

-55°C ~ 175°C (TJ)

Base Product Number :

IPP129N

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

3.8V @ 30μA

Vgs (Max) :

±20V

Power Dissipation :

71

FET Type :

N-Channel

Subcategory :

MOSFETs

Supplier Device Package :

PG-TO220-3

Series :

StrongIRFET? 2

Brand :

Infineon Technologies

Continuous Drain Current Id :

52

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Package Type :

TO-220

Package :

Tube

Maximum Operating Temperature :

+ 175 C

Channel Type :

N

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 52A (Tc)

Product Status :

Active

Packaging :

Tube

Pin Count :

3

Manufacturer :

Infineon

Number of Elements per Chip :

1

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100 V

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

12.9mOhm @ 30A, 10V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Transistor Polarity :

N-Channel

FET Feature :

-

Number of Channels :

1 Channel

Qualification :

-