IPP126N10N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

94W Tc

Terminal Position :

Single

Turn On Delay Time :

14 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 50V

Published :

2008

FET Type :

N-Channel

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

13 Weeks

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

24 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Rds On (Max) @ Id, Vgs :

12.3m Ω @ 46A, 10V

Continuous Drain Current (ID) :

58A

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Avalanche Energy Rating (Eas) :

70 mJ

RoHS Status :

ROHS3 Compliant

Power Dissipation :

94W

Lead Free :

Lead Free

ECCN Code :

EAR99

Fall Time (Typ) :

5 ns

Package / Case :

TO-220-3

Number of Terminations :

3

Vgs (Max) :

±20V

Rise Time :

8ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

58A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Number of Elements :

1

Max Dual Supply Voltage :

100V

Halogen Free :

Halogen Free

Series :

OptiMOS™

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB