IPP120P04P404AKSA1
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- Mfr.Part #
- IPP120P04P404AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 120A TO220-3
- Stock
- 13,646
- In Stock ：
- 13,646
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 52 ns
- Rise Time :
- 20ns
- Length :
- 10.36mm
- Turn-Off Delay Time :
- 49 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 14790pF @ 25V
- Continuous Drain Current (ID) :
- 120A
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 100A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Drain to Source Voltage (Vdss) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~175°C TJ
- Width :
- 4.57mm
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Halogen Free :
- Halogen Free
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 136W Tc
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 14 Weeks
- Height :
- 15.95mm
- Lead Free :
- Contains Lead
- Mounting Type :
- Through Hole
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 480A
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 30 ns
- Vgs(th) (Max) @ Id :
- 4V @ 340μA
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 78 mJ
- Max Dual Supply Voltage :
- -40V
- Number of Pins :
- 3
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Packaging :
- Tube
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Datasheets
- IPP120P04P404AKSA1
P-Channel Tube 3.8m Ω @ 100A, 10V ±20V 14790pF @ 25V 205nC @ 10V 40V TO-220-3
IPP120P04P404AKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 78 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14790pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 49 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 30 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by -40V, it supports the maximal dual supply voltage.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP120P04P404AKSA1 Features
the avalanche energy rating (Eas) is 78 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 49 ns
based on its rated peak drain current 480A.
a 40V drain to source voltage (Vdss)
IPP120P04P404AKSA1 Applications
There are a lot of Infineon Technologies
IPP120P04P404AKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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