IPP120N10S403AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Number of Elements :

1

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 180μA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Power Dissipation-Max :

250W Tc

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 100A, 10V

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

10ns

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

480A

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

14 Weeks

Turn On Delay Time :

20 ns

Fall Time (Typ) :

40 ns

Published :

2013

Halogen Free :

Halogen Free

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Max Dual Supply Voltage :

100V

Continuous Drain Current (ID) :

120A

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Case Connection :

DRAIN

Turn-Off Delay Time :

45 ns

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

10120pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Vgs (Max) :

±20V