IPP120N06S4H1AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

21900pF @ 25V

Drain to Source Voltage (Vdss) :

60V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2009

Series :

OptiMOS™

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

1060 mJ

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

480A

Vgs(th) (Max) @ Id :

4V @ 200μA

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Power Dissipation-Max :

250W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 100A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

120A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0024Ohm

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSFM-T3