IPP120N06S403AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101, OptiMOS™

Published :

2009

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

FET Type :

N-Channel

Package / Case :

TO-220-3

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 120µA

Power Dissipation-Max :

167W Tc

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

120A

Weight :

6.000006g

Packaging :

Tube

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

480A

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Number of Channels :

1

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Max Dual Supply Voltage :

60V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0032Ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

392 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Terminal Position :

Single