IPP120N06S403AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60V

Case Connection :

DRAIN

ECCN Code :

EAR99

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Power Dissipation-Max :

167W Tc

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Series :

OptiMOS™

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 120µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Packaging :

Tube

Published :

2009

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

392 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

480A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 100A, 10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.0032Ohm

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

13150pF @ 25V

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

120A

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE