IPP120N04S402AKSA1
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- Mfr.Part #
- IPP120N04S402AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220-3
- Stock
- 9,669
- In Stock ：
- 9,669
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 134nC @ 10V
- Turn On Delay Time :
- 27 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 480 mJ
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Rise Time :
- 16ns
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 30 ns
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 100A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 40V
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 158W Tc
- Published :
- 2010
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 10740pF @ 25V
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 120A
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 110μA
- Lead Free :
- Contains Lead
- Drain-source On Resistance-Max :
- 0.0021Ohm
- Pulsed Drain Current-Max (IDM) :
- 480A
- Packaging :
- Tube
- Series :
- OptiMOS™
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Datasheets
- IPP120N04S402AKSA1
N-Channel Tube 2.1m Ω @ 100A, 10V ±20V 10740pF @ 25V 134nC @ 10V TO-220-3
IPP120N04S402AKSA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 480 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10740pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 120A amps.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 480A.A turn-on delay time of 27 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPP120N04S402AKSA1 Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 30 ns
based on its rated peak drain current 480A.
IPP120N04S402AKSA1 Applications
There are a lot of Infineon Technologies
IPP120N04S402AKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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