IPP120N04S401AKSA1
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- Mfr.Part #
- IPP120N04S401AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220-3-1
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 14 Weeks
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Power Dissipation-Max :
- 188W Tc
- Published :
- 2010
- Drain-source On Resistance-Max :
- 0.0019Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 120A
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 176nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.9m Ω @ 100A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Series :
- OptiMOS™
- Max Dual Supply Voltage :
- 40V
- Length :
- 10mm
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 34 ns
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 41 ns
- Vgs(th) (Max) @ Id :
- 4V @ 140μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 14000pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Width :
- 4.4mm
- Height :
- 15.65mm
- RoHS Status :
- RoHS Compliant
- Halogen Free :
- Halogen Free
- Pulsed Drain Current-Max (IDM) :
- 480A
- Datasheets
- IPP120N04S401AKSA1
N-Channel Tube 1.9m Ω @ 100A, 10V ±20V 14000pF @ 25V 176nC @ 10V TO-220-3
IPP120N04S401AKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 750 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14000pF @ 25V.This device conducts a continuous drain current (ID) of 120A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 41 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 480A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 34 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 40V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP120N04S401AKSA1 Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 41 ns
based on its rated peak drain current 480A.
IPP120N04S401AKSA1 Applications
There are a lot of Infineon Technologies
IPP120N04S401AKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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