IPP120N04S302AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

1880 mJ

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

4V @ 230μA

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Transistor Element Material :

SILICON

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

40V

Package / Case :

TO-220-3

Published :

2006

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

120A Tc

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

120A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0023Ohm

Additional Feature :

ULTRA LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 80A, 10V

ECCN Code :

EAR99

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

14300pF @ 25V

Vgs (Max) :

±20V