IPP11N03LA
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- Mfr.Part #
- IPP11N03LA
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 30A TO220-3
- Stock
- 31,691
- In Stock ：
- 31,691
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 52W
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Fall Time (Typ) :
- 2.8 ns
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 52W Tc
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 25V
- Rise Time :
- 43ns
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.0115Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 5V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1358pF @ 15V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 11.5m Ω @ 30A, 10V
- Current Rating :
- 30A
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 30A
- Pulsed Drain Current-Max (IDM) :
- 210A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Voltage - Rated DC :
- 25V
- Terminal Finish :
- MATTE TIN
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Published :
- 2008
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 20 ns
- Package / Case :
- TO-220-3
- Series :
- OptiMOS™
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 2V @ 20μA
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Datasheets
- IPP11N03LA
N-Channel Tube 11.5m Ω @ 30A, 10V ±20V 1358pF @ 15V 11nC @ 5V TO-220-3
IPP11N03LA Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 80 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1358pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 30A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 20 ns.Peak drain current for this device is 210A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IPP11N03LA Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 210A.
IPP11N03LA Applications
There are a lot of Infineon Technologies
IPP11N03LA applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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