IPP114N03LGHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11.4mOhm @ 30A, 10V

Channel Type :

N

Vgs (Max) :

±20V

Radiation Hardening :

No

Power Dissipation :

38

Supplier Device Package :

PG-TO220-3-1

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package :

Bulk

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Max Operating Temperature :

175 °C

Product Status :

Active

RoHS :

Compliant

Min Operating Temperature :

-55 °C

Drain to Source Voltage (Vdss) :

30 V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Package / Case :

TO-220-3

Operating Temperature :

-55°C ~ 175°C (TJ)

Mount :

Through Hole

Number of Elements :

1

Technology :

MOSFET (Metal Oxide)

Turn-On Delay Time :

3.8 ns

Turn-Off Delay Time :

15 ns

Power Dissipation (Max) :

38W (Tc)

FET Feature :

-

Continuous Drain Current Id :

30

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 10 V

Rise Time :

3 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20 V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

30 A

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 15 V

Series :

OptiMOS™ 3