IPP114N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0114Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

Rds On (Max) @ Id, Vgs :

11.4m Ω @ 30A, 10V

Pin Count :

3

DS Breakdown Voltage-Min :

30V

ECCN Code :

EAR99

Number of Elements :

1

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

260

Surface Mount :

No

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Packaging :

Tube

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

210A

Power Dissipation-Max :

38W Tc

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

30 mJ

Drain Current-Max (Abs) (ID) :

30A

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e3

Terminal Position :

Single

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Series :

OptiMOS™

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

RoHS Status :

RoHS Compliant

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Published :

2008

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V