IPP10N03LB G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

200A

Terminal Position :

Single

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

57 mJ

Drain Current-Max (Abs) (ID) :

50A

Number of Elements :

1

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

58W Tc

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Published :

2008

JESD-609 Code :

e3

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Packaging :

Tube

Surface Mount :

No

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 20μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

30V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1639pF @ 15V

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Pin Count :

3

Reach Compliance Code :

Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0099Ohm

Mounting Type :

Through Hole