IPP100N10S305AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

176nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 100A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Package / Case :

TO-220-3

ECCN Code :

EAR99

Fall Time (Typ) :

20 ns

Pulsed Drain Current-Max (IDM) :

400A

Height :

9.25mm

Turn-Off Delay Time :

60 ns

Avalanche Energy Rating (Eas) :

1445 mJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0051Ohm

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Element Configuration :

Single

Drain to Source Breakdown Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 240µA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11570pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

100V

Width :

4.4mm

Number of Terminations :

3

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Published :

2006

Length :

10mm

JEDEC-95 Code :

TO-220AB

Power Dissipation :

300W

Rise Time :

17ns

Halogen Free :

Halogen Free

JESD-609 Code :

e3

Turn On Delay Time :

34 ns

Series :

OptiMOS™