IPP100N08S207AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4700pF @ 25V

Power Dissipation-Max :

300W Tc

Max Dual Supply Voltage :

75V

Transistor Element Material :

SILICON

Fall Time (Typ) :

30 ns

Factory Lead Time :

16 Weeks

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

26 ns

Mounting Type :

Through Hole

Turn-Off Delay Time :

61 ns

Package / Case :

TO-220-3

JESD-609 Code :

e3

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

400A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Number of Pins :

3

Lead Free :

Contains Lead

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™

Mount :

Through Hole

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Rise Time :

51ns

Rds On (Max) @ Id, Vgs :

7.1m Ω @ 80A, 10V

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2006

Terminal Finish :

Tin (Sn)

Number of Elements :

1

FET Type :

N-Channel

Packaging :

Tube

Power Dissipation :

300W