IPP100N08N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Max Dual Supply Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Fall Time (Typ) :

5 ns

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tube

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 40V

Number of Pins :

3

Number of Elements :

1

Power Dissipation-Max :

100W Tc

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Terminal Position :

Single

Transistor Application :

SWITCHING

Pin Count :

3

ECCN Code :

EAR99

Series :

OptiMOS™

Pulsed Drain Current-Max (IDM) :

280A

Qualification Status :

Not Qualified

Turn-Off Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

13 Weeks

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

100W

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10m Ω @ 46A, 10V

Continuous Drain Current (ID) :

70A

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

90 mJ

Turn On Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Rise Time :

46ns

Halogen Free :

Halogen Free

Number of Terminations :

3