IPI65R600C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Power Dissipation-Max :

63W Tc

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Qualification Status :

Not Qualified

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

JESD-30 Code :

R-PSIP-T3

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.6Ohm

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Series :

CoolMOS™

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

142 mJ

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

18A

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Pin Count :

3

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED