IPI65R600C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Transistor Type :

1 N-Channel

Package Quantity :

500

Channel Type :

N

Maximum Operating Temperature :

+ 150 C

Technology :

Si

Height :

9.45 mm

Series :

CoolMOS C6

Gate to Source Voltage (Vgs) :

20 V

Rds On Max :

600 mΩ

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

600mOhm @ 2.1A, 10V

Min Operating Temperature :

-55 °C

Brand :

Infineon Technologies

Lead Free :

Lead Free

Tradename :

CoolMOS

Package :

Bulk

Mounting Type :

Through Hole

Number of Elements :

1

Turn-On Delay Time :

12 ns

Packaging :

Tube

Configuration :

Single

Product Category :

MOSFET

Length :

10.2 mm

Package / Case :

TO-262-3

Input Capacitance (Ciss) (Max) @ Vds :

440 pF @ 100 V

Continuous Drain Current (ID) :

7.3 A

Mounting Style :

Through Hole

Halogen Free :

Halogen Free

Subcategory :

MOSFETs

Max Power Dissipation :

63 W

Current - Continuous Drain (Id) @ 25°C :

7.3A (Tc)

Max Operating Temperature :

150 °C

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Number of Channels :

1 Channel

Width :

4.5 mm

Max Dual Supply Voltage :

650 V

Rise Time :

9 ns

Drain to Source Voltage (Vdss) :

650 V

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

63W (Tc)

FET Feature :

-

Channel Mode :

Enhancement

Continuous Drain Current Id :

7.3

Supplier Device Package :

PG-TO262-3-1

Product Status :

Active

Turn-Off Delay Time :

80 ns

Mount :

Through Hole

Vgs (Max) :

±20V

Power Dissipation :

63 W

Manufacturer :

Infineon

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

RoHS :

Compliant

On-State Resistance :

600 mΩ

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance :

440 pF

Product Type :

MOSFET