IPI65R420CFDXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Packaging :

Tube

Reach Compliance Code :

Compliant

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.4A, 10V

DS Breakdown Voltage-Min :

650V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

27A

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Pbfree Code :

yes

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

8.7A

Transistor Element Material :

SILICON

Surface Mount :

No

Avalanche Energy Rating (Eas) :

227 mJ

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.42Ohm

Pin Count :

3

FET Type :

N-Channel

Terminal Position :

Single

Power Dissipation-Max :

83.3W Tc

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 340μA

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)