IPI65R380C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.38Ohm

Power Dissipation-Max :

83W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pin Count :

3

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

215 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2008

DS Breakdown Voltage-Min :

650V

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Qualification Status :

Not Qualified

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

29A

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 10V

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

10.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Series :

CoolMOS™

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

JESD-30 Code :

R-PSIP-T3

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant