IPI65R310CFD
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- Mfr.Part #
- IPI65R310CFD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 10,696
- In Stock ：
- 10,696
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 11.4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pulsed Drain Current-Max (IDM) :
- 34.4A
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- CoolMOS™
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 45 ns
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Rise Time :
- 7.5ns
- Published :
- 2008
- Factory Lead Time :
- 16 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- JESD-30 Code :
- R-PSIP-T3
- Turn On Delay Time :
- 11 ns
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 104.2W Tc
- Packaging :
- Tube
- Fall Time (Typ) :
- 7 ns
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Dual Supply Voltage :
- 650V
- Datasheets
- IPI65R310CFD
N-Channel Tube 310m Ω @ 4.4A, 10V ±20V 1100pF @ 100V 41nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R310CFDXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1100pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 34.4A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 11 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI65R310CFDXKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
based on its rated peak drain current 34.4A.
IPI65R310CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPI65R310CFDXKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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