IPI65R310CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

7 ns

Pbfree Code :

yes

FET Type :

N-Channel

Mount :

Through Hole

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Number of Terminations :

3

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

45 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™

Published :

2008

Rds On (Max) @ Id, Vgs :

310m Ω @ 4.4A, 10V

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

34.4A

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Factory Lead Time :

16 Weeks

Turn On Delay Time :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 440μA

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

11.4A

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

290 mJ

Power Dissipation-Max :

104.2W Tc

Rise Time :

7.5ns

Lead Free :

Lead Free