IPI65R280C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Series :

CoolMOS™

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Avalanche Energy Rating (Eas) :

290 mJ

Factory Lead Time :

12 Weeks

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.28Ohm

Pbfree Code :

yes

Number of Terminations :

3

Pin Count :

3

Reach Compliance Code :

Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

39A

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Power Dissipation-Max :

104W Tc

Surface Mount :

No