IPI65R190CFDXKSA1
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- Mfr.Part #
- IPI65R190CFDXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 17.5A TO262-3
- Stock
- 39,786
- In Stock ：
- 39,786
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 151W Tc
- Turn-Off Delay Time :
- 53.2 ns
- Power Dissipation :
- 151W
- Number of Terminations :
- 3
- Series :
- CoolMOS™
- Lead Free :
- Lead Free
- Published :
- 2008
- Mount :
- Through Hole
- Fall Time (Typ) :
- 6.4 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 100V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 730μA
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Max Dual Supply Voltage :
- 650V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.3A, 10V
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Tc
- Pbfree Code :
- yes
- Rise Time :
- 8.4ns
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 484 mJ
- JESD-30 Code :
- R-PSIP-T3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 57.2A
- Turn On Delay Time :
- 12 ns
- Continuous Drain Current (ID) :
- 17.5A
- Transistor Element Material :
- SILICON
- Datasheets
- IPI65R190CFDXKSA1
N-Channel Tube 190m Ω @ 7.3A, 10V ±20V 1850pF @ 100V 68nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R190CFDXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 484 mJ.The maximum input capacitance of this device is 1850pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17.5A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 53.2 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 57.2A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI65R190CFDXKSA1 Features
the avalanche energy rating (Eas) is 484 mJ
a continuous drain current (ID) of 17.5A
the turn-off delay time is 53.2 ns
based on its rated peak drain current 57.2A.
IPI65R190CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPI65R190CFDXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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