IPI65R190C6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

650V

Pulsed Drain Current-Max (IDM) :

66A

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.19Ohm

Power Dissipation-Max :

151W Tc

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

FET Type :

N-Channel

Pbfree Code :

yes

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

650V

Avalanche Energy Rating (Eas) :

485 mJ

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 100V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Series :

CoolMOS™

Packaging :

Tube

Surface Mount :

No

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA