IPI65R150CFD
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- Mfr.Part #
- IPI65R150CFD
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 17,139
- In Stock ：
- 17,139
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 22.4A Tc
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Series :
- CoolMOS™
- Vgs(th) (Max) @ Id :
- 4.5V @ 900μA
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 9.3A, 10V
- Continuous Drain Current (ID) :
- 22.4A
- Drain to Source Breakdown Voltage :
- 700V
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 650V
- Number of Elements :
- 1
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 5.6 ns
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 52.8 ns
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 614 mJ
- Rise Time :
- 7.6ns
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 100V
- Turn On Delay Time :
- 12.4 ns
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 195.3W Tc
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Published :
- 2008
- Drain-source On Resistance-Max :
- 0.15Ohm
- Datasheets
- IPI65R150CFD
N-Channel Tube 150m Ω @ 9.3A, 10V ±20V 2340pF @ 100V 86nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R150CFDXKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 614 mJ.The maximum input capacitance of this device is 2340pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22.4A.When VGS=700V, and ID flows to VDS at 700VVDS, the drain-source breakdown voltage is 700V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 52.8 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 72A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI65R150CFDXKSA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 52.8 ns
based on its rated peak drain current 72A.
IPI65R150CFDXKSA1 Applications
There are a lot of Infineon Technologies
IPI65R150CFDXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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