IPI65R110CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Halogen Free :

Halogen Free

Max Operating Temperature :

150°C

FET Type :

N-Channel

Drain to Source Resistance :

110mOhm

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Vgs (Max) :

±20V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 100V

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

277.8W Tc

Series :

CoolMOS™

Input Capacitance :

3.24nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

11ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

68 ns

Rds On (Max) @ Id, Vgs :

110mOhm @ 12.7A, 10V

Drain to Source Voltage (Vdss) :

650V

Rds On Max :

110 mΩ

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 1.3mA

Published :

2011

Fall Time (Typ) :

6 ns

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

31.2A

Current - Continuous Drain (Id) @ 25°C :

31.2A Tc

RoHS Status :

RoHS Compliant

Supplier Device Package :

PG-TO262-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube