IPI65R099C6
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- Mfr.Part #
- IPI65R099C6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 30,687
- In Stock ：
- 30,687
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Pin Count :
- 3
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 2780pF @ 100V
- Continuous Drain Current (ID) :
- 38A
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 127nC @ 10V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.099Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.2mA
- Pulsed Drain Current-Max (IDM) :
- 115A
- Max Dual Supply Voltage :
- 650V
- Turn On Delay Time :
- 10.6 ns
- Power Dissipation-Max :
- 278W Tc
- Turn-Off Delay Time :
- 77 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- CoolMOS™
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Halogen Free :
- Halogen Free
- Rise Time :
- 9ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 12.8A, 10V
- Terminal Position :
- Single
- Fall Time (Typ) :
- 6 ns
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IPI65R099C6
N-Channel Tube 99m Ω @ 12.8A, 10V ±20V 2780pF @ 100V 127nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI65R099C6XKSA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 845 mJ.The maximum input capacitance of this device is 2780pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 38A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 77 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 115A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10.6 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 650V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPI65R099C6XKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 38A
the turn-off delay time is 77 ns
based on its rated peak drain current 115A.
IPI65R099C6XKSA1 Applications
There are a lot of Infineon Technologies
IPI65R099C6XKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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