IPI60R520CPAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

16 ns

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

74 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

Rise Time :

12ns

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 100V

Drain-source On Resistance-Max :

0.52Ohm

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Pbfree Code :

No

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

17A

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Continuous Drain Current (ID) :

6.8A

Vgs (Max) :

±20V

Lead Free :

Contains Lead

Turn On Delay Time :

17 ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Number of Elements :

1

Avalanche Energy Rating (Eas) :

166 mJ

Series :

CoolMOS™

Power Dissipation-Max :

66W Tc

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.8A, 10V

Max Dual Supply Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 340µA

Mounting Type :

Through Hole

Number of Terminations :

3

Terminal Finish :

Tin (Sn)