IPI60R385CP

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Mfr.Part #
IPI60R385CP
Manufacturer
Infineon Technologies
Package / Case
TO-262-3
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
696
In Stock :
696

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
Surface Mount :
No
Qualification Status :
COMMERCIAL
Number of Channels :
1 Channel
RoHS :
Details
Power Dissipation (Max) :
83W (Tc)
Rds On (Max) @ Id, Vgs :
385mOhm @ 5.2A, 10V
Operating Temperature :
-55°C ~ 150°C (TJ)
Height :
9.45 mm
Package / Case :
TO-262-3
Product Status :
Active
Continuous Drain Current Id :
9
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
83
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
27 A
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Supplier Device Package :
PG-TO262-3-1
Tradename :
CoolMOS
FET Feature :
-
Number of Terminals :
3
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
JESD-609 Code :
e3
Configuration :
Single
Product Category :
MOSFET
Length :
10.2 mm
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.385 Ω
Technology :
Si
Product Type :
MOSFET
FET Type :
N-Channel
Brand :
Infineon Technologies
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
227 mJ
Maximum Operating Temperature :
+ 150 C
Transistor Application :
SWITCHING
Manufacturer :
Infineon
Rise Time :
5 ns
JEDEC-95 Code :
TO-262AA
Package Shape :
RECTANGULAR
Pin Count :
3
Input Capacitance (Ciss) (Max) @ Vds :
790 pF @ 100 V
Channel Type :
N
Subcategory :
MOSFETs
Drain to Source Voltage (Vdss) :
600 V
Mounting Style :
Through Hole
Package :
Bulk
Terminal Form :
THROUGH-HOLE
Number of Elements :
1
Vgs(th) (Max) @ Id :
3.5V @ 340µA
Width :
4.5 mm
Peak Reflow Temperature (Cel) :
260
Packaging :
Tube
Transistor Polarity :
N-Channel
Series :
CoolMOS CP
DS Breakdown Voltage-Min :
600 V
JESD-30 Code :
R-PSIP-T3
Terminal Position :
Single
Channel Mode :
Enhancement
Datasheets
IPI60R385CP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI60R385CP from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-262-3, Mounting Type:Through Hole, IPI60R385CP pinout, IPI60R385CP datasheet PDF, IPI60R385CP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI60R385CP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPI60R385CP


Si N-Channel Tube 385mOhm @ 5.2A, 10V ±20V 790 pF @ 100 V 22 nC @ 10 V 600 V TO-262-3

IPI60R385CP Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 227 mJ.A device's maximal input capacitance is 790 pF @ 100 V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 27 A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600 V drain to source voltage (Vdss).

IPI60R385CP Features


the avalanche energy rating (Eas) is 227 mJ
based on its rated peak drain current 27 A.
a 600 V drain to source voltage (Vdss)


IPI60R385CP Applications


There are a lot of Infineon
IPI60R385CP applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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