IPI60R299CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Surface Mount :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain-source On Resistance-Max :

0.299Ohm

Pulsed Drain Current-Max (IDM) :

34A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Power Dissipation-Max :

96W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Packaging :

Tube

Avalanche Energy Rating (Eas) :

290 mJ

Transistor Element Material :

SILICON

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

299m Ω @ 6.6A, 10V

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Vgs(th) (Max) @ Id :

3.5V @ 440µA

JESD-609 Code :

e3