IPD95R2K0P7ATMA1
- Mfr.Part #
- IPD95R2K0P7ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 4A TO252-3
- Stock
- 2,490
- In Stock :
- 2,490
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 400V
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- Power Dissipation-Max :
- 37W Tc
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 950V
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 1.7A, 10V
- Series :
- CoolMOS™ P7
- Published :
- 2018
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 80μA
- Datasheets
- IPD95R2K0P7ATMA1

N-Channel Tape & Reel (TR) 2 Ω @ 1.7A, 10V ±20V 330pF @ 400V 10nC @ 10V 950V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD95R2K0P7ATMA1 Overview
A device's maximal input capacitance is 330pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 950V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPD95R2K0P7ATMA1 Features
a 950V drain to source voltage (Vdss)
IPD95R2K0P7ATMA1 Applications
There are a lot of Infineon Technologies
IPD95R2K0P7ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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