IPD90N04S402ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

JESD-609 Code :

e3

Continuous Drain Current (ID) :

90A

FET Type :

N-Channel

Max Dual Supply Voltage :

40V

Number of Terminations :

2

Rise Time :

10ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

9430pF @ 25V

Turn-Off Delay Time :

27 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

475 mJ

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 90A, 10V

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Published :

2010

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 95µA

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Drain-source On Resistance-Max :

0.0024Ohm

Number of Pins :

3

Turn On Delay Time :

23 ns