IPD90N06S404ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Reference Standard :

AEC-Q101

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

10400pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0038Ohm

FET Type :

N-Channel

Factory Lead Time :

26 Weeks

ECCN Code :

EAR99

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 90A, 10V

Drain Current-Max (Abs) (ID) :

90A

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

150W Tc

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

331 mJ

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

360A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Vgs(th) (Max) @ Id :

4V @ 90µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Case Connection :

DRAIN

Series :

OptiMOS™

Terminal Form :

Gull wing