IPD90N04S304ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Drain Current-Max (Abs) (ID) :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

360A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 80A, 10V

Power Dissipation-Max :

136W Tc

Terminal Position :

Single

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

260 mJ

Number of Terminations :

2

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0036Ohm

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40V

Drain to Source Voltage (Vdss) :

40V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 90µA

Reference Standard :

AEC-Q101

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

ECCN Code :

EAR99

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)