IPD90N04S405ATMA1
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- Mfr.Part #
- IPD90N04S405ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 86A TO252-3
- Stock
- 42,115
- In Stock ：
- 42,115
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2010
- Number of Pins :
- 3
- Turn On Delay Time :
- 9 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 40V
- Fall Time (Typ) :
- 10 ns
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 16 Weeks
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 77 mJ
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.0052Ohm
- Rise Time :
- 11ns
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Continuous Drain Current (ID) :
- 86A
- Lead Free :
- Contains Lead
- Power Dissipation-Max :
- 65W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 7 ns
- Current - Continuous Drain (Id) @ 25°C :
- 86A Tc
- Series :
- Automotive, AEC-Q101, OptiMOS™
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 30μA
- Rds On (Max) @ Id, Vgs :
- 5.2m Ω @ 86A, 10V
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2960pF @ 25V
- Terminal Form :
- Gull wing
- Halogen Free :
- Halogen Free
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPD90N04S405ATMA1
N-Channel Tape & Reel (TR) 5.2m Ω @ 86A, 10V ±20V 2960pF @ 25V 37nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N04S405ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 77 mJ.A device's maximal input capacitance is 2960pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 86A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 7 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 40V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPD90N04S405ATMA1 Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 86A
the turn-off delay time is 7 ns
IPD90N04S405ATMA1 Applications
There are a lot of Infineon Technologies
IPD90N04S405ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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