IPD90N04S403ATMA1
- Mfr.Part #
- IPD90N04S403ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO252-3
- Stock
- 18,097
- In Stock :
- 18,097
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Published :
- 2010
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 66.8nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 185 mJ
- Number of Elements :
- 1
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 15 ns
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 40V
- Halogen Free :
- Halogen Free
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 90A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 94W Tc
- Continuous Drain Current (ID) :
- 90A
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 5260pF @ 25V
- Turn On Delay Time :
- 14 ns
- Rise Time :
- 11ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 53μA
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Datasheets
- IPD90N04S403ATMA1

N-Channel Tape & Reel (TR) 3.2m Ω @ 90A, 10V ±20V 5260pF @ 25V 66.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N04S403ATMA1 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 185 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5260pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPD90N04S403ATMA1 Features
the avalanche energy rating (Eas) is 185 mJ
a continuous drain current (ID) of 90A
IPD90N04S403ATMA1 Applications
There are a lot of Infineon Technologies
IPD90N04S403ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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