IPD90N04S403ATMA1

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Mfr.Part #
IPD90N04S403ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 40V 90A TO252-3
Stock
18,097
In Stock :
18,097

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Lead Free :
Contains Lead
Published :
2010
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
66.8nC @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
JESD-30 Code :
R-PSSO-G2
Vgs (Max) :
±20V
Avalanche Energy Rating (Eas) :
185 mJ
Number of Elements :
1
Factory Lead Time :
16 Weeks
Fall Time (Typ) :
15 ns
Case Connection :
DRAIN
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Reach Compliance Code :
not_compliant
Number of Pins :
3
Series :
Automotive, AEC-Q101, OptiMOS™
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tape and Reel (TR)
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Gate to Source Voltage (Vgs) :
20V
JESD-609 Code :
e3
Max Dual Supply Voltage :
40V
Halogen Free :
Halogen Free
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
3.2m Ω @ 90A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
94W Tc
Continuous Drain Current (ID) :
90A
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Input Capacitance (Ciss) (Max) @ Vds :
5260pF @ 25V
Turn On Delay Time :
14 ns
Rise Time :
11ns
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4V @ 53μA
Mount :
Surface Mount
Terminal Form :
Gull wing
Terminal Finish :
Tin (Sn)
Datasheets
IPD90N04S403ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N04S403ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, IPD90N04S403ATMA1 pinout, IPD90N04S403ATMA1 datasheet PDF, IPD90N04S403ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N04S403ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD90N04S403ATMA1


N-Channel Tape & Reel (TR) 3.2m Ω @ 90A, 10V ±20V 5260pF @ 25V 66.8nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD90N04S403ATMA1 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 185 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5260pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 90A amps.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 40V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPD90N04S403ATMA1 Features


the avalanche energy rating (Eas) is 185 mJ
a continuous drain current (ID) of 90A


IPD90N04S403ATMA1 Applications


There are a lot of Infineon Technologies
IPD90N04S403ATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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