IPD90R1K2C3BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

900V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Pin Count :

4

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

68 mJ

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Number of Elements :

1

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

900V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

10A

Power Dissipation-Max :

83W Tc

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Drain Current-Max (Abs) (ID) :

5.1A

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 2.8A, 10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA