IPD90R1K2C3ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

400 ns

Input Capacitance :

710pF

Weight :

3.949996g

Vgs(th) (Max) @ Id :

3.5V @ 310μA

Max Dual Supply Voltage :

900V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

18 Weeks

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 2.8A, 10V

Continuous Drain Current (ID) :

5.1A

Number of Pins :

3

Drain to Source Voltage (Vdss) :

900V

FET Type :

N-Channel

Number of Channels :

1

Drain to Source Resistance :

1.2Ohm

Supplier Device Package :

PG-TO252-3

Power Dissipation-Max :

83W Tc

Series :

CoolMOS™

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Rise Time :

20ns

Rds On Max :

1.2 Ω

Turn On Delay Time :

70 ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

83W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.1A Tc

Gate to Source Voltage (Vgs) :

30V

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Published :

2008

Element Configuration :

Single