IPD90P04P4L04ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Infineon

RoHS :

Details

Power Dissipation :

125

Gate Charge (Qg) (Max) @ Vgs :

176 nC @ 10 V

Transistor Polarity :

P-Channel

Supplier Device Package :

PG-TO252-3-313

Power Dissipation (Max) :

125W (Tc)

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Packaging :

Cut Tape

Continuous Drain Current Id :

90

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Vgs (Max) :

+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds :

11570 pF @ 25 V

Series :

OptiMOS?-P2

Product Type :

MOSFET

Brand :

Infineon Technologies

Channel Type :

P Channel

Rds On (Max) @ Id, Vgs :

4.3mOhm @ 90A, 10V

Mounting Type :

Surface Mount

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Base Product Number :

IPD90P

Package :

Digi-Reel?

MSL :

MSL 1 - Unlimited

FET Feature :

-

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

40 V

Operating Temperature :

-55°C ~ 175°C (TJ)

FET Type :

P-Channel

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Qualification :

AEC-Q101