IPD90P04P405ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 90A, 10V

Vgs (Max) :

±20V

Factory Lead Time :

26 Weeks

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Rise Time :

8ns

Series :

OptiMOS™

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

40V

Avalanche Energy Rating (Eas) :

60 mJ

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Number of Terminations :

2

Fall Time (Typ) :

14 ns

Drain-source On Resistance-Max :

0.0047Ohm

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

90A

FET Type :

P-Channel

Lead Free :

Contains Lead

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

3 ns

Power Dissipation-Max :

125W Tc

Turn-Off Delay Time :

7 ns

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Case Connection :

DRAIN

Max Dual Supply Voltage :

-40V

Mounting Type :

Surface Mount