IPD90P03P4L04ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

360A

Operating Mode :

ENHANCEMENT MODE

Published :

2008

FET Type :

P-Channel

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

11300pF @ 25V

Avalanche Energy Rating (Eas) :

370 mJ

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

137W Tc

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Number of Terminations :

2

Vgs (Max) :

+5V, -16V

Vgs(th) (Max) @ Id :

2V @ 253μA

Drain Current-Max (Abs) (ID) :

90A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.0068Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

Automotive, AEC-Q101, OptiMOS™

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 90A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1