IPD90N10S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Max Dual Supply Voltage :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 90A, 10V

Lead Free :

Contains Lead

FET Type :

N-Channel

Number of Elements :

1

Mount :

Surface Mount

Continuous Drain Current (ID) :

90A

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Published :

2013

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation-Max :

136W Tc

Input Capacitance (Ciss) (Max) @ Vds :

4870pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

250 mJ

Drain-source On Resistance-Max :

0.0067Ohm

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

14 Weeks

Series :

Automotive, AEC-Q101, OptiMOS™

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

360A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Vgs (Max) :

±20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE