IPD90N06S4L06ATMA2
- Mfr.Part #
- IPD90N06S4L06ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A TO252-31
- Stock
- 31,264
- In Stock :
- 31,264
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 8 ns
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 6.3m Ω @ 90A, 10V
- Published :
- 2009
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 50 ns
- Height :
- 2.41mm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2.2V @ 40μA
- Vgs (Max) :
- ±16V
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Halogen Free :
- Halogen Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5680pF @ 25V
- Power Dissipation-Max :
- 79W Tc
- Weight :
- 3.949996g
- Turn On Delay Time :
- 10 ns
- Gate to Source Voltage (Vgs) :
- 16V
- Number of Terminations :
- 2
- Rise Time :
- 3ns
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 90A
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 67 mJ
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 60V
- Width :
- 6.22mm
- Packaging :
- Tape and Reel (TR)
- Length :
- 6.73mm
- Datasheets
- IPD90N06S4L06ATMA2

N-Channel Tape & Reel (TR) 6.3m Ω @ 90A, 10V ±16V 5680pF @ 25V 75nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N06S4L06ATMA2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 67 mJ.The maximum input capacitance of this device is 5680pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 90A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 60V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPD90N06S4L06ATMA2 Features
the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 50 ns
IPD90N06S4L06ATMA2 Applications
There are a lot of Infineon Technologies
IPD90N06S4L06ATMA2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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