IPD90N06S4L06ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

ULTRA-LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Series :

OptiMOS™

Transistor Element Material :

SILICON

Published :

2009

Vgs (Max) :

±16V

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.0063Ohm

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 90A, 10V

Pulsed Drain Current-Max (IDM) :

360A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

67 mJ

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

79W Tc

Reference Standard :

AEC-Q101

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

90A

Terminal Position :

Single

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ