IPD90N06S4L05ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 90A, 10V

Turn-Off Delay Time :

80 ns

Pbfree Code :

yes

Number of Channels :

1

Published :

2009

Terminal Form :

Gull wing

Vgs (Max) :

±16V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

16 Weeks

Fall Time (Typ) :

13 ns

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

107W Tc

Rise Time :

4ns

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Gate to Source Voltage (Vgs) :

16V

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Drain-source On Resistance-Max :

0.0046Ohm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Elements :

1

Weight :

3.949996g

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

90A

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Series :

Automotive, AEC-Q101, OptiMOS™

Transistor Element Material :

SILICON

Number of Terminations :

2