IPD90N06S4L05ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±16V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2009

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

90A

Terminal Position :

Single

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Power Dissipation-Max :

107W Tc

Terminal Form :

Gull wing

Additional Feature :

ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

360A

Drain-source On Resistance-Max :

0.0046Ohm

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

135 mJ

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Reference Standard :

AEC-Q101

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 90A, 10V