IPD90N06S407ATMA2

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Mfr.Part #
IPD90N06S407ATMA2
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 90A TO252-31
Stock
28,016
In Stock :
28,016

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
ECCN Code :
EAR99
Published :
2009
FET Type :
N-Channel
Number of Terminations :
2
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Factory Lead Time :
16 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Continuous Drain Current (ID) :
90A
Rds On (Max) @ Id, Vgs :
6.9m Ω @ 90A, 10V
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20V
Weight :
3.949996g
Vgs(th) (Max) @ Id :
4V @ 40μA
Input Capacitance :
4.5nF
Mounting Type :
Surface Mount
Mount :
Surface Mount
Avalanche Energy Rating (Eas) :
67 mJ
Fall Time (Typ) :
5 ns
Reach Compliance Code :
not_compliant
Drain-source On Resistance-Max :
0.0069Ohm
JESD-609 Code :
e3
Max Dual Supply Voltage :
60V
Series :
Automotive, AEC-Q101, OptiMOS™
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Form :
Gull wing
Turn On Delay Time :
15 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~175°C TJ
Turn-Off Delay Time :
23 ns
Packaging :
Tape and Reel (TR)
Number of Channels :
1
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Rise Time :
3ns
Case Connection :
DRAIN
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Power Dissipation-Max :
79W Tc
JESD-30 Code :
R-PSSO-G2
Datasheets
IPD90N06S407ATMA2
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, IPD90N06S407ATMA2 pinout, IPD90N06S407ATMA2 datasheet PDF, IPD90N06S407ATMA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD90N06S407ATMA2


N-Channel Tape & Reel (TR) 6.9m Ω @ 90A, 10V ±20V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD90N06S407ATMA2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 67 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD90N06S407ATMA2 Features


the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 23 ns


IPD90N06S407ATMA2 Applications


There are a lot of Infineon Technologies
IPD90N06S407ATMA2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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