IPD90N06S407ATMA2

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Mfr.Part #
IPD90N06S407ATMA2
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 90A TO252-31
Stock
28,016
In Stock :
28,016

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~175°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Rise Time :
3ns
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
67 mJ
Reach Compliance Code :
not_compliant
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Max Dual Supply Voltage :
60V
Continuous Drain Current (ID) :
90A
Rds On (Max) @ Id, Vgs :
6.9m Ω @ 90A, 10V
Drain-source On Resistance-Max :
0.0069Ohm
JESD-609 Code :
e3
Case Connection :
DRAIN
ECCN Code :
EAR99
Factory Lead Time :
16 Weeks
Fall Time (Typ) :
5 ns
Number of Terminations :
2
Terminal Position :
Single
Published :
2009
Turn On Delay Time :
15 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
3.949996g
Mount :
Surface Mount
Input Capacitance :
4.5nF
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
Automotive, AEC-Q101, OptiMOS™
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Form :
Gull wing
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 40μA
Terminal Finish :
Tin (Sn)
Power Dissipation-Max :
79W Tc
Turn-Off Delay Time :
23 ns
JESD-30 Code :
R-PSSO-G2
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Pbfree Code :
yes
Vgs (Max) :
±20V
Datasheets
IPD90N06S407ATMA2
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Channels:1, IPD90N06S407ATMA2 pinout, IPD90N06S407ATMA2 datasheet PDF, IPD90N06S407ATMA2 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD90N06S407ATMA2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD90N06S407ATMA2


N-Channel Tape & Reel (TR) 6.9m Ω @ 90A, 10V ±20V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD90N06S407ATMA2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 67 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPD90N06S407ATMA2 Features


the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 23 ns


IPD90N06S407ATMA2 Applications


There are a lot of Infineon Technologies
IPD90N06S407ATMA2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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