IPD90N06S407ATMA2
- Mfr.Part #
- IPD90N06S407ATMA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 90A TO252-31
- Stock
- 28,016
- In Stock :
- 28,016
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Rise Time :
- 3ns
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 67 mJ
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 60V
- Continuous Drain Current (ID) :
- 90A
- Rds On (Max) @ Id, Vgs :
- 6.9m Ω @ 90A, 10V
- Drain-source On Resistance-Max :
- 0.0069Ohm
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 5 ns
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Published :
- 2009
- Turn On Delay Time :
- 15 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 3.949996g
- Mount :
- Surface Mount
- Input Capacitance :
- 4.5nF
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 40μA
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 79W Tc
- Turn-Off Delay Time :
- 23 ns
- JESD-30 Code :
- R-PSSO-G2
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Datasheets
- IPD90N06S407ATMA2

N-Channel Tape & Reel (TR) 6.9m Ω @ 90A, 10V ±20V 56nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD90N06S407ATMA2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 67 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 60V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPD90N06S407ATMA2 Features
the avalanche energy rating (Eas) is 67 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 23 ns
IPD90N06S407ATMA2 Applications
There are a lot of Infineon Technologies
IPD90N06S407ATMA2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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