IPD90N06S405ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 60μA

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

6500pF @ 25V

Number of Channels :

1

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Series :

Automotive, AEC-Q101, OptiMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

107W Tc

Rise Time :

5ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

90A

Case Connection :

DRAIN

Terminal Position :

Single

Published :

2009

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 90A, 10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

8 ns

Pbfree Code :

yes

Turn On Delay Time :

20 ns

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Weight :

3.949996g

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

35 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Max Dual Supply Voltage :

60V

Number of Pins :

3